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Title Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999 / edited by K.H. Ploog, G. Tränkle and G. Weimann.
Imprint Boca Raton, FL : CRC Press, Taylor & Francis Group, 2018.

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Description 1 online resource.
Series Institute of Physics conference series ; number 166
Institute of Physics conference series ; no. 166.
Note First published 2000 by IOP Publishing Ltd.
Bibliog. Includes bibliographical references and index.
Note Available only to authorized UTEP users.
Online resource; title from PDF title page (EBSCO, viewed July 16, 2018).
Subject Compound semiconductors -- Congresses.
Gallium arsenide semiconductors -- Congresses.
Genre Conference papers and proceedings.
Contents Cover -- Half Title -- Title Page -- Copyright Page -- Contents -- International Symposium on Compound Semiconductors Award and Heinrich Welker Gold Medal -- Young Scientist Award -- Preface -- Sponsors -- Symposium Committees -- Chapter 1: Plenary Paper -- Heterostructures tomorrow: from physics to Moore's law -- Chapter 2: Growth -- State-of-the-art semi-insulating GaAs substrates -- Conformal growth of III-Vs on Si: from low defect density materials to advanced devices -- Reflectance difference spectroscopy for growth control and characterization of low-temperature grown (Al,Ga)As materials -- MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit -- Selective area growth of GaAs and InGaAs on GaAs (111)B substrates by migration-enhanced epitaxy -- MBE regrowth on AlxGa1-xAs cleaned by arsenic-free high temperature surface cleaning method -- Optimized surface treatment for MBE regrowth of (Al,Ga)As on (Al,Ga)As -- High electron and hole mobility Al0.3Ga0.7 As heterostructures grown in the same standard MBE setup -- Growth of metastable GaAsSb for InP-based type-II emitters -- MBE growth of pseudomorphic InGaAs/GaPAsSb quantum wells on GaAs -- GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 µm wavelength lasers -- Titanium doping of GaSb MBE-layers -- LP-MOVPE growth of carbon doped In0.48Ga0.52P/GaAs HBT using an all-liquid-source configuration -- MOVPE growth of (AlGa)As and (InGa)P on GaAs-based trenches -- Structural and magnetic anisotropy of epitaxially grown MnAs on GaAs(001) -- Preparation of (Ga,Fe)As and its photo-magnetic characteristics -- Molecular beam epitaxy and properties of GaSb with MnSb clusters -- Chapter 3: Characterization -- Surface acoustic field mapping on GaAs using microscopic optical techniques.
Excitation density dependence of Fermi edge singularity in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures -- Microscopic probing of localized excitons in quantum wells -- Competitive capture dynamics of photogenerated carriers in a GaAs/Al0.17Ga0.83As triple quantum well with different well thicknesses -- Electric field effect of GaAs photoluminescence in AlGaAs/GaAs pn heterojunction -- Ga[sup(+)] ion beam induced compositional intermixing in MBE grown Al[sub(x)]Ga[sub(1-x)]As/GaAs quantum wells: optimization of the structural parameters for low dose applications -- Superradiance in semiconductors and form-factor of homogeneous line broadening -- Direct investigation of low-density localized hole states by optical detection of quantum oscillations in AlGaAs/InGaAs/GaAs -- Electric field induced recombination centres in GaAs -- Electrical properties of InAs/AlSb/GaSb double quantum well structures -- How is resonant tunnelling affected by self-assembled quantum dots? -- Spectrum analysis of interband optical transmissions and quantitative model of eigen energies and absorptions in In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures -- Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice -- Electroreflectance bias-wavelength mapping of the GaAs/InGaAs/AlGaAs structure -- Tunable GHz oscillations in weakly coupled GaAs/AlAs superlattices -- Channel depth dependent transport characteristics of a two-dimensional electron gas in an undoped GaAs/AlGaAs heterostructure -- Capacitance spectroscopy of Si-doped GaAs grown by atomic hydrogen-assisted molecular beam epitaxy -- Hall coefficient singularity observed from p-SiGeC grown on n -- Si substrate -- Comparative X-HREM study of (311)A and (100)GaAs/AlAs superlattices.
On the origin of strain relaxation in MOVPE InGaAs/GaAs SQWs by (010) aligned misfit dislocations -- Precise structure investigations of heterosystem epitaxial Si/porous Si/substrate Si -- Chapter 4: Quantum Wires and Quantum Dots -- InAs/GaAs quantum dots for 1.3 µm emitters -- Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures -- Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles -- Natural formation of square scale structures on patterned vicinal substrates by MOVPE: application to the fabrication of quantum structures -- Growth and electrical characterization of self-organized InAs quantum wires on InP -- Free-standing and overgrown InGaAs/GaAs nanotubes: fabrication, potential applications -- Free-standing conductive GeSi/Si helical microcoils, micro- and nanotubes -- Stacked/InAs quantum wires grown on vicinal GaAs(OOl) surface by molecular beam epitaxy -- GaAs oxide patterns generated by SPM tip-induced nano-oxidation technique using modulated tip-bias -- Transport through quasi 1DEG channels having periodic potential modulation induced by self-organized GaAs multiatomic steps -- GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits -- Spin relaxation dynamics of drifting electrons in GaAs narrow (10 nm) quantum wires -- Multiple gate-controlled peaks in a zero dimensional resonant tunnelling transistor -- Lattice-matched alloy films: a novel system for self-organized growth of quantum dots -- Planar ordering of InP quantum dots on (100) InGaP -- Initial stages of InAs-quantum dot formation studies by reflectance-difference spectroscopy and photoluminescence.
Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy -- (InGa)As/(AlGa)As self-assembled quantum dots: optical properties and laser applications -- Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local strain effect on the band structures -- Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots -- 1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix -- Enhanced electron-phonon interaction in InAs/GaAs self-assembled quantum dots -- Spontaneous emission control of single quantum dots -- Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs -- High output power CW operation of a quantum dot laser -- Chapter 5: Electronic Devices -- Enhanced performance in surface-channel strained-Si n- and p-MOSFETs -- Suppressed boron diffusion in carbon-doped SiGe heterojunction bipolar transistors -- High-performance small InP/InGaAs HBTs with reduced parasitic base-collector capacitance fabricated using a novel base-metal design -- InGaP/GaAs power HBTs for L-band applications -- Extremely low-resistance PdIn ohmic contacts to p-GaAs for use in base contacts of GaAs-based HBTs -- New GaAs Schottky diodes with 180V blocking voltage for power electronics realised on 3" wafers -- W-band MMICs with 0.15 µm metamorphic InAlAs/InGaAs HEMTs on GaAs substrate: performance, thermal stability and reliability -- Complementary HFETs on GaAs with 0.2 µm gate length -- On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs -- Study of alloyed and non-alloyed ohmic contact doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs with fT and fmax over 170 GHz.
Other Author Ploog, Klaus, editor.
Tränkle, G., editor.
Weimann, G., editor.