LEADER 00000cam  2200541Ii 4500 
001    1042329413 
003    OCoLC 
005    20200920050422.6 
006    m     o  d         
007    cr cnu|||unuuu 
008    180702r20182000flu     ob    101 0 eng d 
020    9781420034592|q(electronic bk.) 
020    1420034596|q(electronic bk.) 
020    |z9780750307048 
035    (OCoLC)1042329413 
035    Taylor & Francis All eBooks 
035    skip4alma 
040    N$T|beng|erda|epn|cN$T|dN$T|dOCLCF|dAU@ 
049    txum 
050  4 QC611.8.C64eb 
072  7 TEC|x009070|2bisacsh 
111 2  International Symposium on Compound Semiconductors|n(26th 
       :|d1999 :|cBerlin, Germany) 
245 10 Compound semiconductors 1999 :|bproceedings of the Twenty-
       sixth International Symposium on Compound Semiconductors 
       held in Berlin, Germany, 22-26 August 1999 /|cedited by 
       K.H. Ploog, G. Tränkle and G. Weimann. 
264  1 Boca Raton, FL :|bCRC Press, Taylor & Francis Group,
       |c2018. 
300    1 online resource. 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
490 1  Institute of Physics conference series ;|vnumber 166 
500    First published 2000 by IOP Publishing Ltd. 
504    Includes bibliographical references and index. 
505 0  Cover -- Half Title -- Title Page -- Copyright Page -- 
       Contents -- International Symposium on Compound 
       Semiconductors Award and Heinrich Welker Gold Medal -- 
       Young Scientist Award -- Preface -- Sponsors -- Symposium 
       Committees -- Chapter 1: Plenary Paper -- Heterostructures
       tomorrow: from physics to Moore's law -- Chapter 2: Growth
       -- State-of-the-art semi-insulating GaAs substrates -- 
       Conformal growth of III-Vs on Si: from low defect density 
       materials to advanced devices -- Reflectance difference 
       spectroscopy for growth control and characterization of 
       low-temperature grown (Al,Ga)As materials -- MBE growth of
       single crystalline AlInAs/GaInAs MQWs at the low growth 
       temperature limit -- Selective area growth of GaAs and 
       InGaAs on GaAs (111)B substrates by migration-enhanced 
       epitaxy -- MBE regrowth on AlxGa1-xAs cleaned by arsenic-
       free high temperature surface cleaning method -- Optimized
       surface treatment for MBE regrowth of (Al,Ga)As on (Al,
       Ga)As -- High electron and hole mobility Al0.3Ga0.7 As 
       heterostructures grown in the same standard MBE setup -- 
       Growth of metastable GaAsSb for InP-based type-II emitters
       -- MBE growth of pseudomorphic InGaAs/GaPAsSb quantum 
       wells on GaAs -- GSMBE growth of compressively strained 
       and strain-compensated InAsP/InGaAsP quantum wells for 1.3
       µm wavelength lasers -- Titanium doping of GaSb MBE
       -layers -- LP-MOVPE growth of carbon doped In0.48Ga0.52P/
       GaAs HBT using an all-liquid-source configuration -- MOVPE
       growth of (AlGa)As and (InGa)P on GaAs-based trenches -- 
       Structural and magnetic anisotropy of epitaxially grown 
       MnAs on GaAs(001) -- Preparation of (Ga,Fe)As and its 
       photo-magnetic characteristics -- Molecular beam epitaxy 
       and properties of GaSb with MnSb clusters -- Chapter 3: 
       Characterization -- Surface acoustic field mapping on GaAs
       using microscopic optical techniques. 
505 8  Excitation density dependence of Fermi edge singularity in
       pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs 
       heterostructures -- Microscopic probing of localized 
       excitons in quantum wells -- Competitive capture dynamics 
       of photogenerated carriers in a GaAs/Al0.17Ga0.83As triple
       quantum well with different well thicknesses -- Electric 
       field effect of GaAs photoluminescence in AlGaAs/GaAs pn 
       heterojunction -- Ga[sup(+)] ion beam induced 
       compositional intermixing in MBE grown Al[sub(x)]Ga[sub(1-
       x)]As/GaAs quantum wells: optimization of the structural 
       parameters for low dose applications -- Superradiance in 
       semiconductors and form-factor of homogeneous line 
       broadening -- Direct investigation of low-density 
       localized hole states by optical detection of quantum 
       oscillations in AlGaAs/InGaAs/GaAs -- Electric field 
       induced recombination centres in GaAs -- Electrical 
       properties of InAs/AlSb/GaSb double quantum well 
       structures -- How is resonant tunnelling affected by self-
       assembled quantum dots? -- Spectrum analysis of interband 
       optical transmissions and quantitative model of eigen 
       energies and absorptions in In0.53Ga0.47As/In0.52Al0.48As 
       multi-quantum well structures -- Light-hole Stark-ladder 
       photoluminescence induced by hole injection from a remote 
       heavy-hole state in a GaAs/InAlAs superlattice -- 
       Electroreflectance bias-wavelength mapping of the GaAs/
       InGaAs/AlGaAs structure -- Tunable GHz oscillations in 
       weakly coupled GaAs/AlAs superlattices -- Channel depth 
       dependent transport characteristics of a two-dimensional 
       electron gas in an undoped GaAs/AlGaAs heterostructure -- 
       Capacitance spectroscopy of Si-doped GaAs grown by atomic 
       hydrogen-assisted molecular beam epitaxy -- Hall 
       coefficient singularity observed from p-SiGeC grown on n -
       - Si substrate -- Comparative X-HREM study of (311)A and 
       (100)GaAs/AlAs superlattices. 
505 8  On the origin of strain relaxation in MOVPE InGaAs/GaAs 
       SQWs by (010) aligned misfit dislocations -- Precise 
       structure investigations of heterosystem epitaxial Si/
       porous Si/substrate Si -- Chapter 4: Quantum Wires and 
       Quantum Dots -- InAs/GaAs quantum dots for 1.3 µm 
       emitters -- Engineering of growth selectivity on patterned
       GaAs (311)A substrates for novel lateral semiconductor 
       nanostructures -- Selective MBE growth of InGaAs quantum 
       wire-dot coupled structures with controlled double-barrier
       potential profiles -- Natural formation of square scale 
       structures on patterned vicinal substrates by MOVPE: 
       application to the fabrication of quantum structures -- 
       Growth and electrical characterization of self-organized 
       InAs quantum wires on InP -- Free-standing and overgrown 
       InGaAs/GaAs nanotubes: fabrication, potential applications
       -- Free-standing conductive GeSi/Si helical microcoils, 
       micro- and nanotubes -- Stacked/InAs quantum wires grown 
       on vicinal GaAs(OOl) surface by molecular beam epitaxy -- 
       GaAs oxide patterns generated by SPM tip-induced nano-
       oxidation technique using modulated tip-bias -- Transport 
       through quasi 1DEG channels having periodic potential 
       modulation induced by self-organized GaAs multiatomic 
       steps -- GaAs quantum wire transistors and single electron
       transistors using Schottky wrap gates for quantum 
       integrated circuits -- Spin relaxation dynamics of 
       drifting electrons in GaAs narrow (10 nm) quantum wires --
       Multiple gate-controlled peaks in a zero dimensional 
       resonant tunnelling transistor -- Lattice-matched alloy 
       films: a novel system for self-organized growth of quantum
       dots -- Planar ordering of InP quantum dots on (100) InGaP
       -- Initial stages of InAs-quantum dot formation studies by
       reflectance-difference spectroscopy and photoluminescence.
505 8  Selective formation and alignment of InAs quantum dots 
       over mesa stripes on GaAs(100) substrates studied by 
       spatially resolved photoluminescence spectroscopy -- 
       (InGa)As/(AlGa)As self-assembled quantum dots: optical 
       properties and laser applications -- Proof of InAs/GaAs 
       self-organized quantum dot lasing and the experimental 
       determination of local strain effect on the band 
       structures -- Photovoltage and luminescence study of 
       stacked InAs/GaAs self-organized quantum dots -- 1.3 &
       #x00B5;m emission from quantum dots formed by 2 ML InAs 
       deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix
       -- Enhanced electron-phonon interaction in InAs/GaAs self-
       assembled quantum dots -- Spontaneous emission control of 
       single quantum dots -- Long-wavelength edge-emitting 
       lasers on gallium arsenide using InAs quantum dots 
       embedded in InGaAs -- High output power CW operation of a 
       quantum dot laser -- Chapter 5: Electronic Devices -- 
       Enhanced performance in surface-channel strained-Si n- and
       p-MOSFETs -- Suppressed boron diffusion in carbon-doped 
       SiGe heterojunction bipolar transistors -- High-
       performance small InP/InGaAs HBTs with reduced parasitic 
       base-collector capacitance fabricated using a novel base-
       metal design -- InGaP/GaAs power HBTs for L-band 
       applications -- Extremely low-resistance PdIn ohmic 
       contacts to p-GaAs for use in base contacts of GaAs-based 
       HBTs -- New GaAs Schottky diodes with 180V blocking 
       voltage for power electronics realised on 3" wafers -- W-
       band MMICs with 0.15 µm metamorphic InAlAs/InGaAs 
       HEMTs on GaAs substrate: performance, thermal stability 
       and reliability -- Complementary HFETs on GaAs with 0.2 &
       #x00B5;m gate length -- On-state breakdown measurements in
       GaAs MESFETs and InP-based HEMTs -- Study of alloyed and 
       non-alloyed ohmic contact doped-channel In0.8Ga0.2P/
       In0.53Ga0.47As/InP HFETs with fT and fmax over 170 GHz. 
506    Available only to authorized UTEP users. 
588 0  Online resource; title from PDF title page (EBSCO, viewed 
       July 16, 2018). 
650  0 Compound semiconductors|vCongresses. 
650  0 Gallium arsenide semiconductors|vCongresses. 
655  7 Conference papers and proceedings.|2fast
       |0(OCoLC)fst01423772 
700 1  Ploog, Klaus,|eeditor. 
700 1  Tränkle, G.,|eeditor. 
700 1  Weimann, G.,|eeditor. 
830  0 Institute of Physics conference series ;|vno. 166. 
856 40 |uhttp://0-www.taylorfrancis.com.lib.utep.edu/books/
       9780429078514|zTo access this resource 
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