LEADER 00000cam  2200517Ii 4500 
001    1042329414 
003    OCoLC 
005    20200920050422.7 
006    m     o  d         
007    cr cnu|||unuuu 
008    180702r20182005flu     ob    101 0 eng d 
020    9781420034561|q(electronic bk.) 
020    1420034561|q(electronic bk.) 
020    |z9780750310178 
035    (OCoLC)1042329414 
035    Taylor & Francis All eBooks 
035    skip4alma 
040    N$T|beng|erda|epn|cN$T|dN$T|dOCLCF|dAU@ 
049    txum 
050  4 QC611.8.C64eb 
072  7 TEC|x009070|2bisacsh 
111 2  International Symposium on Compound Semiconductors|n(31st 
       :|d2004 :|cSeoul, Korea) 
245 10 Compound semiconductors 2004 :|bproceedings of the thirty-
       first International Symposium on Compound Semiconductors 
       held in Seoul, Korea, 12-16 September 2004 /|cedited by 
       Jong-Chun Woo [and four others]. 
264  1 Boca Raton, FL :|bCRC Press, Taylor & Francis Group,
       |c2018. 
300    1 online resource. 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
490 1  Institute of Physics conference series ;|vnumber 184 
500    First published 2005 by IOP Publishing Ltd. 
504    Includes bibliographical references and index. 
505 0  Cover -- Half Title -- Title Page -- Copyright Page -- 
       International Symposium on Compound Semiconductors (ISCS) 
       Heinrich Welker Award -- ISCS Quantum Devices Award -- 
       Young Scientist Award -- Preface -- ISCS 2004 Symposium 
       Committees -- Acknowledgments -- Contents -- Section 1: 
       Nanostructure electronic and optoelectronic devices -- A 
       Lagrangian Approach to Wavefunction Engineering of Layered
       Quantum Semiconductor Structures -- Dependence of Band-
       Offset on Sb content in AlGaAs/ GaAsSb Quantum Wells Grown
       on GaAs by MBE -- Band Alignment Analysis of Strained 
       GaAsSb/InGaAs Quantum Wells -- Fabrication of Self-
       Assembled Nanodots at Arbitrary Locations by Spatially 
       Controlled Implant Source Growth -- Anomalous Current 
       Leakage and Depletion Width Control in Nanometer Scale 
       Schottky Gates Formed on AlGaAs/GaAs Surface -- Nonlinear 
       Variable Capacitance Characteristics in GaInP/GaAs Triple 
       Barrier Resonant Tunneling Diodes -- Single electron 
       transistors using single self-assembled InAs quantum dots 
       -- 70 nm InGaAs/InAlAs/GaAs Metamorphic HEMTs for High 
       Frequency Applications -- Two-stage high gain W-band 
       amplifier using metamorphic HEMT technology -- Improved 
       Breakdown Voltage and Output Conductance Characteristics 
       of GaAs pHEMTs using Composite Gate fabricated by Digital 
       Recess Method -- High performance 0.1 pm GaAs PHEMT with 
       Si pulse doped cap layer for 77GHz car radar -- 
       Development of a Highly-Reliable Over 200 W GaN-HEMT Power
       Amplifier -- High Speed InP HBT Driver IC for Laser 
       Modulations -- (GaIn)(NAsSb): The Challenges for Long 
       Wavelength Communications Devices -- Ultra-high speed 
       internal RF-gain InGaAs/InAlAs avalanche photodetector -- 
       Very high sensitivity operation in quantum dot infrared 
       photodetectors -- RF-enhanced InGaAs/InAlAs uni-traveling-
       carrier photodetector. 
505 8  Force/displacement Detection using Quantum Effects in InAs
       /Al0.5Ga0.5Sb Two-dimensional Electron Systems -- Self-
       Consistent Analysis of Electron Transport Properties in 
       Quantum Wires -- Insulator-quantum Hall transitions in a 
       two-dimensional electron gas using self-assembled InAs 
       dots -- Excitonic diamagnetic shift and oscillating Zeeman
       splitting in quantum wire: Magneto-photoluminescence study
       -- AlGaAs/InGaAs PHEMT with Multiple Quantum Wire Channels
       -- 20 Gbps operation of RTD/HBT MOBILE (MOnostable 
       Bistable Logic Element) IC based on an InP technology -- 
       Speed-Power Performances of Quantum Wire Switches 
       Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs
       based Hexagonal BDD Quantum LSIs -- FDTD Analysis of the 
       Self-aligned Total Internal Reflection Mirrors for Micro-
       Ring Cavity Resonators -- 40Gbps Waveguide Photodiode with
       Responsivity more than 1.0A/W, Large Alignment Tolerance, 
       and High Saturation Current -- Section 4: Wide and narrow 
       gap materials and bandgap engineering -- The Crystal 
       Growth of GaN on MOCVD-Deposited GaN by the Method of 
       Sublimation -- Surface morphologies of AlGaN films and 
       AlGaN/GaN heterostructures on vicinal sapphire (0001) 
       substrates grown by rf-MBE -- Growth and Characterization 
       of High In Composition InGaN epilayers by rf-MBE -- Cubic 
       InN Growth on R-plane (1012) Sapphire by ECR-MBE -- AlGaN/
       GaN Hetero-structure on GaN Templates with High Al 
       Composition and Low resistance by RF-MBE -- High Quality 
       AlGaN/AlN Superlattices grown on AIN/Sapphire Template by 
       MOVPE -- Effect of Si doping to the (1-101)GaN grown on a 
       7 degree off oriented (001)Si by selective MOVPE -- Defect
       control in Ga(In)NAs films grown by atomic H assisted RF-
       MBE -- Electrical properties in hexagonal InN thin films -
       - Optical Phonon Dephasing Channels in GaN revealed by the
       Coherent Phonon Method. 
505 8  Performance enhancement by using the n+-GaN cap layer and 
       gate recess technology on the AlGaN/GaN HEMTs fabrication 
       -- Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain
       Current DLTS -- Surface potential transient of AlGaN/GaN 
       HEMTs measured by Kelvin probe force microscopy -- AlGaN/
       GaN MIS-HEMTs with ZrO2 Gate Insulator -- Self-heating 
       Effect Study of AlGaN/GaN HEMT using Pulsed IVT on the 
       Isothermal Conditions -- Power performance enhancement of 
       metamorphic In0.3Al0.7As/In0.45Ga0.55 As HEMTs using 
       pseudomorphic channel design -- Highly Reflective and 
       Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors 
       Grown on 6H-SiC(0001) by Molecular Beam Epitaxy -- High 
       Power InGaN/GaN Flip-Chip Blue and White LED -- High power
       AlInGaN-based multi-quantum well laser diode with low 
       operating current -- Crack-free ZnO layer growth on glass 
       substrates by MgO-buffer layer -- Effect of ambient gases 
       on structural and optical characteristics of post annealed
       ZnO films -- Activation of group-I acceptors by hydrogen 
       codoping in ZnO -- Optical properties of cubic MgZnO thin 
       films -- Parameters required to simulate electric 
       characteristics of SiC devices -- Enhancement of 
       ionization efficiency of acceptors by their excited states
       in heavily doped wide bandgap semiconductors -- High 
       Extraction Efficiency Light-Emitting-Diodes using 
       Hemispherical Corrugated Interface Substrate -- 
       Transconductance Linearity Improvement of E-pHEMT at High 
       Vgs -- Section 5: Epitaxy and Processing -- First-
       principles investigations of Ga and As adsorption 
       properties on a GaAs(110) surface -- Development of plasma
       -free etch chemistry to realize defect-free GaAs 
       micromechanical resonator structures -- Patterned InGaAs 
       Quantum Dots by Selective Area MOCVD -- Growth of AlGaN on
       Al2O3 substrates by mixed-source HVPE -- CrN Buffer Layer 
       Study For GaN Growth Using Molecular Beam Epitaxy(MBE). 
505 8  Growth and Characterization of HVPE GaN on c-sapphire with
       CrN Buffer Layer -- Doping of GaN, AlGaN by mixed-source 
       HVPE -- Investigation of thermal degradation on structural
       and optical qualities of InGaN/InGaNMQWs -- Low threshold 
       current GalnNAs QW LD with InGaAs/GaNAs barriers -- The 
       effect of surface treatment on Zinc Oxide -- 
       Photoluminescence study of ZnO thin films deposited by 
       pulsed laser ablation -- Photoluminescence from Single 
       Hexagonal Nano-Wire Grown by Selective Area MOVPE -- 
       Diluted Semiconductors Formed from Energetic Beams -- A 
       New GaAs MOS Varactor Fabricated Using a Low-Cost GaAs 
       Oxidation Technology -- Section 6: Characterization -- 
       Measurements for nanocrystals in silicon deposited by rf-
       magnetron sputtering -- Structure Properties and Phase 
       Evolution of MgxZn1-xO Layers Grown on c-sapphire by P-MBE
       -- Bi-induced phonons in GaAs1-xBix -- Temporal Behavior 
       of Absorption Changes and Yellow Luminescence in Thin 
       InGaN Epilayers -- High-energy photoemission studies of 
       transition metal ion doped III-V nitrides -- Strain effect
       on energy band of InAs/InP quantum dots by GaAs layer 
       insertion -- Electron-Hole Separation in InAs Quantum Dots
       -- Spin relaxation in charged InAs/GaAs quantum dots -- 
       Anti-parallel spin interaction between the carriers in 
       coupled quantum dots -- Raman study of biaxial strain in 
       InGaN-GaN self-assembled quantum dots grown on sapphire 
       (0001) -- Optical properties of II-VI-based magnetic 
       semiconductor self-assembled quantum dots -- 
       Interpretation of Leakage Current in Ni/n-(Al)GaN Schottky
       Structures and Its Influence on Surface Preparation 
       Conditions -- An analysis of the kink phenomena at lower 
       drain current in GaAs-based short-gate MHEMTs using the 
       hydrodynamic transport simulation -- Demonstration of the 
       formation of GaAs homojunction far-infrared detection by 
       reflection measurements. 
506    Available only to authorized UTEP users. 
588 0  Online resource; title from PDF title page (EBSCO, viewed 
       July 16, 2018). 
650  0 Compound semiconductors|vCongresses. 
650  0 Semiconductors|xMaterials|vCongresses. 
655  7 Conference papers and proceedings.|2fast
       |0(OCoLC)fst01423772 
700 1  Woo, Jong-Chun,|eeditor. 
830  0 Institute of Physics conference series ;|vno. 184. 
856 40 |uhttp://0-www.taylorfrancis.com.lib.utep.edu/books/
       9780429177101|zTo access this resource 
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