Front Cover ; Integrated Lasers on Silicon; Copyright ; Contents; Preface; Introduction; Chapter 1: Laser Integration Challenges; 1.1. Evolution of microprocessor technologies; 1.2. Photonic integration schemes; 1.3. Semiconductor lasers; Chapter 2: Group IV Silicon Lasers; 2.1. Group IV silicon lasers: issues; 2.2. Emission from bulk silicon; 2.3. Using quantum confinement; 2.4. Raman scattering for lasing; 2.5. Rare-earth doping; 2.6. Group IV SiGeSn alloys for lasing; Chapter 3: III-V Lasers Bonded on Si; 3.1. Introduction.
3.2. Historical flip-chip bonding technology: advantages and drawbacks3.3. Die versus wafer bonding; 3.4. Basic principles of wafer bonding; 3.5. Basic principles of transfer printing ; 3.6. Device structures and performances of III-V lasers coupled to SOI waveguides; 3.7. Conclusion; Chapter 4: Monolithic III-V Lasers on Silicon; 4.1. The monolithic integration: issues and strategies; 4.2. Monolithic devices; Chapter 5: Laser Architectures for On-chip Information Technologies; 5.1. The role of integrated lasers in hybrid photonic- electronic chips; 5.2. Laser designs for on-chip routing.
5.3. Concluding remarksConclusion; Bibliography; Index; Back Cover.
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment. Features a clear description of the advantages, drawbacks, and challenges of laser integration on silicon Serves as a staple reference in the general field of silicon photonics Focuses on the promising developments of hybrid and monolithic III-V lasers on silicon, previously unreviewed Discusses the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment.